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BD179G. bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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BD179G. bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() BD179G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) V(BR)CEO 80 − Vdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO − 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE 63 15 160 − − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.8 Vdc Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.3 Vdc Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT 3.0 − MHz 1. Pulse Test: Pulse Width ≤ 300 As, Duty Cycle ≤ 2.0%. Figure 1. Active Region Safe Operating Area 10 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 3.0 5.0 7.0 10 20 30 50 100 SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.0 AMP) PULSE DUTY CYCLE < 10% 70 0.3 0.2 TJ = 150°C dc 5.0 ms 1.0 100 ms 1.0 ms The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. |
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