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MB91F577CSPMC bảng dữ liệu(PDF) 155 Page - Cypress Semiconductor |
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MB91F577CSPMC bảng dữ liệu(HTML) 155 Page - Cypress Semiconductor |
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155 / 163 page ![]() Document Number: 002-04725 Rev.*A Page 155 of 163 MB91570 Series 13.7 Flash memory 13.7.1 Electrical characteristics Parameter Value Unit Remarks Min Typ Max Sector erase time – 200 800 ms 8 Kbyte sector* 1, excluding internal preprogramming time – 300 1100 ms 8 Kbyte sector* 1, including internal preprogramming time – 400 2000 ms 64 Kbyte sector* 1, excluding internal preprogramming time – 700 3700 ms 64 Kbyte sector* 1, including internal preprogramming time 8-bit writing time – 9 288 µs Exclusive of overhead time at system level* 1 16-bit writing time – 12 384 µs Exclusive of overhead time at system level* 1 ECC writing time – 9 288 µs Exclusive of overhead time at system level* 1 Erase cycle* 2/ Data retain time 1,000 cycles/ 20 years, 10,000 cycles/ 10 years, 100,000 cycles/ 5 years – – – Average TA = +85°C* 3 *1: The guaranteed value for erasure up to 100,000 cycles. *2: Number of erase cycles for each sector. *3: This value comes from the technology qualification (using Arrhenius equation to translate high temperature measurements into normalized value at + 85°C). 13.7.2 Notes While the Flash memory is written or erased, shutdown of the external power (VCC5) is prohibited. In the application system where VCC5 might be shut down while writing or erased, be sure to turn the power off by using an external low-voltage detection function. To put it concretely, after the external power supply voltage falls below the detection voltage (VDL *1), hold V CC5 at 2.7V or more within the duration calculated by the following expression: Td *1[µs] + (period of PCLK [µs] × 257) + 50 [µs] *1: See “13.4. AC characteristics, 13.4.10. Low voltage detection (External low-voltage detection)”. |
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