18

C1004-4-98

Physical Characteristics

VGS = 5.0V

VGS = 4.0V

VGS = 3.0V

VGS = 2.0V

VGS = 1.0V

0

5.0

35.0

28.0

21.0

14.0

1.0

2.0

3.0

4.0

ID vs VD, W/L = 20/1.2

N-ch Transistor IV Characteristics of a 20/1.2 device

7.0

0

Drain Voltage (V) V

DS

VGS = –5.0V

VGS = –4.0V

VGS = –3.0V

VGS = –2.0V

0

–5.0

–15.0

–12.0

–9.0

–6.0

–1.0

–2.0

–3.0

–4.0

ID vs VD, W/L = 20/1.2

P-ch Transistor IV Characteristics of a 20/1.2 device

–3.0

0

Drain Voltage (V) V

DS

Starting Material

P <100>

N+/P+ Width/Space

2.0 / 1.2

µm

Starting Mat. Resistivity

7-8.5

Ω-cm

N+ To P+ Space

7.0

µm

Typ. Operating Voltage

5V

Contact To Poly Space

0.8

µm

Well Type

N-well

Contact Overlap Of Diffusion

0.7

µm

Metal Layers

2

Contact Overlap Of Poly

0.7

µm

Poly Layers

1

Metal-1 Overlap Of Contact

0.7

µm

Contact Size

1.2x1.2

µm

Metal-1 Overlap Of Via

0.7

µm

Via Size

1.2x1.2

µm

Metal-2 Overlap Of Via

0.7

µm

Metal-1 Width/Space

1.4 / 1.2

µm

Minimum Pad Opening

65x65

µm

Metal-2 Width/Space

2.0 / 1.4

µm

Minimum Pad-to-Pad Spacing

5.0

µm

Gate Poly Width/Space

1.0 / 1.4

µm

Minimum Pad Pitch

80.0

µm

Metal 2

Metal 1

LTO

p

p

Field Oxide

N-well

LTO

Process C1004