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DG418 bảng dữ liệu(PDF) 4 Page - TEMIC Semiconductors

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DG418 bảng dữ liệu(HTML) 4 Page - TEMIC Semiconductors

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DG417/418/419
4
Siliconix
S-52880—Rev. D, 28-Apr-97
Specificationsa for Unipolar Supplies
Test Conditions
Unless Otherwise Specified
V+
12 V V
0 V
A Suffix
–55 to 125
_C
D Suffix
–40 to 85
_C
Parameter
Symbol
V+ = 12 V, V– = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
rDS(on)
IS = –10 mA, VD = 3.8 V
V+ = 10.8 V
Room
40
W
Dynamic Characteristics
Turn-On Time
tON
RL = 300 W, CL = 35 pF, VS = 8 V
S
Sihi
Ti
T
Ci
i
Room
110
Turn-Off Time
tOFF
L
,
L
p,
S
See Switching Time Test Circuit
Room
40
ns
Break-Before-Make
Time Delay
tD
RL = 300 W, CL = 35 pF
DG419
Room
60
ns
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 W
Room
5
pC
Power Supplies
Positive Supply
Current
I+
Room
0.001
Negative Supply
Current
I–
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
Room
–0.001
mA
Logic Supply Current
IL
IN
Room
0.001
Ground Current
IGND
Room
–0.001
Notes:
a.
Refer to PROCESS OPTION FLOWCHART.
b.
Room = 25
_C, Full = as determined by the operating temperature suffix.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.
Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.



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