TIP41G datasheet(2/7 Pages) ONSEMI

2 / 7 page

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,

TIP42CG (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.67

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

TIP41G, TIP42G

TIP41AG, TIP42AG

TIP41BG, TIP42BG

TIP41CG, TIP42CG

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP41G, TIP41AG, TIP42G, TIP42AG

(VCE = 60 Vdc, IB = 0)

TIP41BG, TIP41CG, TIP42BG, TIP42CG

ICEO

−

0.7

mAdc

Collector Cutoff Current

(VCE = 40 Vdc, VEB = 0)

TIP41G, TIP42G

(VCE = 60 Vdc, VEB = 0)

TIP41AG, TIP42AG

(VCE = 80 Vdc, VEB = 0)

TIP41BG, TIP42BG

(VCE = 100 Vdc, VEB = 0)

TIP41CG, TIP42CG

ICES

−

400

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.3 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

−

Collector−Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 600 mAdc)

VCE(sat)

−

1.5

Vdc

Base−Emitter On Voltage

(IC = 6.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

3.0

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

TIP41G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

TIP41G bảng dữ liệu(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL