PZT751T1G. datasheet(1/4 Pages) ONSEMI

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January, 2015 − Rev. 9

1

Publication Order Number:

PZT751T1/D

PZT751

PNP Silicon Planar

Epitaxial Transistor

This PNP Silicon Epitaxial transistor is designed for use in

industrial and consumer applications. The device is housed in the

SOT−223 package which is designed for medium power surface

mount applications.

Features

• High Current

• The SOT−223 Package can be soldered using wave or reflow.

• SOT−223 Package Ensures Level Mounting, Resulting in

Improved Thermal Conduction, and Allows Visual Inspection of

Soldered Joints. The Formed Leads Absorb Thermal Stress During

Soldering, Eliminating the Possibility of Damage to the Die

• NPN Complement is PZT651T1G

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

−60

Vdc

Collector−Base Voltage

VCBO

−80

Vdc

Emitter−Base Voltage

VEBO

−5.0

Vdc

Collector Current

IC

−2.0

Adc

Total Power Dissipation

@ TA = 25°C (Note 1)

Derate above 25

°C

PD

0.8

6.4

W

mW/

°C

Storage Temperature Range

Tstg

− 65 to 150

°C

Junction Temperature

TJ

150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum

recommended footprint.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Resistance from Junction−to−

Ambient in Free Air

RqJA

156

°C/W

Maximum Temperature for Soldering

Purposes

Time in Solder Bath

TL

260

10

°C

Sec

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

www.onsemi.com

SOT−223 PACKAGE HIGH CURRENT

NPN SILICON TRANSISTOR

SURFACE MOUNT

SOT−223

CASE 318E

STYLE 1

COLLECTOR 2, 4

BASE

1

EMITTER 3

Device

Package

Shipping†

ORDERING INFORMATION

PZT751T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

AYW

ZT751

G

(Note: Microdot may be in either location)

SPZT751T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel

1

2

3

4

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	PZT751T1G	127Kb / 6P	PNP Silicon Planar Epitaxial Transistor January, 2004 ??Rev. 4
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