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MJD47T4G bảng dữ liệu(PDF) 4 Page - ON Semiconductor |
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MJD47T4G bảng dữ liệu(HTML) 4 Page - ON Semiconductor |
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4 / 6 page ![]() MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G http://onsemi.com 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.005 500 1 0.2 0.05 0.02 SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25 °C WIRE BOND LIMIT 20 200 10 TC ≤ 25°C 100 ms 1ms dc 0.01 0.1 0.5 2 5 Figure 6. Active Region Safe Operating Area 100 50 300 CURVES APPLY BELOW RATED VCEO MJD50 MJD47 500 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.02 0.2 2 0.1 0.05 0.5 1 5 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C VCC = 200 V IC/IB = 5 2 1 0.5 0.2 0.1 0.05 Figure 7. Turn−On Time Figure 8. Turn-Off Time IC, COLLECTOR CURRENT (AMPS) 0.01 1 0.5 0.1 0.05 0.02 0.02 0.2 2 0.1 0.05 0.5 1 tr td ts tf TJ = 25°C VCC = 200 V IC/IB = 5 0.2 |
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