công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

TIPL760C bảng dữ liệu(PDF) 2 Page - Bourns Electronic Solutions

tên linh kiện TIPL760C
Giải thích chi tiết về linh kiện  NPN SILICON POWER TRANSISTORS
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  BOURNS [Bourns Electronic Solutions]
Trang chủ  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

TIPL760C bảng dữ liệu(HTML) 2 Page - Bourns Electronic Solutions

  TIPL760C Datasheet HTML 1Page - Bourns Electronic Solutions TIPL760C Datasheet HTML 2Page - Bourns Electronic Solutions TIPL760C Datasheet HTML 3Page - Bourns Electronic Solutions TIPL760C Datasheet HTML 4Page - Bourns Electronic Solutions TIPL760C Datasheet HTML 5Page - Bourns Electronic Solutions  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(sus)
Collector-emitter
sustaining voltage
IC =
10 mA
L = 25 mH
(see Note 2)
TIPL760B
TIPL760C
500
550
V
ICES
Collector-emitter
cut-off current
VCE = 1100 V
VCE = 1200 V
VCE = 1100 V
VCE = 1200 V
VBE =0
VBE =0
VBE =0
VBE =0
TC = 100°C
TC = 100°C
TIPL760B
TIPL760C
TIPL760B
TIPL760C
50
50
200
200
µA
ICEO
Collector cut-off
current
VCE = 500 V
VCE = 550 V
IB =0
IB =0
TIPL760B
TIPL760C
50
50
µA
IEBO
Emitter cut-off
current
VEB =
10 V
IC =0
1
mA
hFE
Forward current
transfer ratio
VCE =
5 V
IC = 0.5 A
(see Notes 3 and 4)
20
60
VCE(sat)
Collector-emitter
saturation voltage
IB =
0.4 A
IB =
0.6 A
IB =
0.6 A
IC =
2A
IC =
3A
IC =
3A
(see Notes 3 and 4)
TC = 100°C
1.0
2.5
5.0
V
VBE(sat)
Base-emitter
saturation voltage
IB =
0.4 A
IB =
0.6 A
IB =
0.6 A
IC =
2A
IC =
3A
IC =
3 A
(see Notes 3 and 4)
TC = 100°C
1.2
1.4
1.3
V
ft
Current gain
bandwidth product
VCE =
10 V
IC = 0.5 A
f =
1 MHz
12
MHz
Cob
Output capacitance
VCB =
20 V
IE = 0
f = 0.1 MHz
110
pF
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.56
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
MIN
TYP
MAX
UNIT
tsv
Voltage storage time
IC = 3 A
VBE(off) = -5 V
IB(on) = 0.6 A
(see Figures 1 and 2)
2.5
µs
trv
Voltage rise time
300
ns
tfi
Current fall time
250
ns
tti
Current tail time
150
ns
txo
Cross over time
400
ns
tsv
Voltage storage time
IC = 3 A
VBE(off) = -5 V
IB(on) = 0.6 A
TC = 100°C
(see Figures 1 and 2)
3µs
trv
Voltage rise time
500
ns
tfi
Current fall time
250
ns
tti
Current tail time
150
ns
txo
Cross over time
750
ns



Html Pages

1 2 3 4 5


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com