BTS204WB datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Three quadrant triacs

BTA204W series B and C

high commutation

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-sp

Thermal resistance

full or half cycle

K/W

junction to solder point

th j-a

Thermal resistance

pcb mounted; minimum footprint

156

K/W

junction to ambient

pcb mounted; pad area as in fig:2

K/W

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BTA204W-

...B

...C

Gate trigger current

D = 12 V; IT = 0.1 A

T2+ G+

T2+ G-

T2- G-

Latching current

D = 12 V; IGT = 0.1 A

T2+ G+

T2+ G-

T2- G-

Holding current

D = 12 V; IGT = 0.1 A

On-state voltage

T = 2 A

1.2

1.5

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.7

1.5

D = 400 V; IT = 0.1 A;

0.25

0.4

j = 125 ˚C

Off-state leakage current

D = VDRM(max); Tj = 125 ˚C

0.1

0.5

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

BTA204W-

...B

...C

D/dt

Critical rate of rise of

DM = 67% VDRM(max); Tj = 125 ˚C;

1000

µs

off-state voltage

exponential waveform; gate open circuit

com/dt

Critical rate of change of

DM = 400 V; Tj = 125 ˚C; IT(RMS) = 1 A;

A/ms

commutating current

com/dt = 20V/µs; gate open circuit

Gate controlled turn-on

TM = 12 A; VD = VDRM(max); IG = 0.1 A;

µs

time

G/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

December 1998

Rev 1.000

BTS204WB bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

BTS204WB bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL