IRHNJ57230 datasheet(1/8 Pages) IRF

tên linh kiện	IRHNJ57230

Giải thích chi tiết về linh kiện	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

13

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

8.2

IDM

Pulsed Drain Current ➀

52

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

60

mJ

IAR

Avalanche Current ➀

13

A

EAR

Repetitive Avalanche Energy ➀

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.4

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 ( for 5s )

Weight

1.0 ( Typical )

g

Pre-Irradiation

International Rectifier’s R5TM technology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm2)). The combination

of low Rdson and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

oC

A

RADIATION HARDENED

IRHNJ57230

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

07/22/02

www.irf.com

1

200V, N-CHANNEL

c

TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on)

ID

IRHNJ57230

100K Rads (Si)

0.20

Ω

13A

IRHNJ53230

300K Rads (Si)

0.20

Ω

13A

IRHNJ54230

600K Rads (Si)

0.20

Ω

13A

IRHNJ58230

1000K Rads (Si)

0.25

Ω

13A

Features:

n Single Event Effect (SEE) Hardened

n Ultra low RDS(on)

n Low Total Gate Charge

n Proton Tolerant

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Ceramic Package

n Light Weight

For footnotes refer to the last page

4

4#

SMD-0.5

PD - 93753A

Số phần tương tự - IRHNJ57230

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRHNJ57230SE	125Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ57230SE	131Kb / 8P	Simple Drive Requirements
	IRHNJ57230SE	131Kb / 8P	Simple Drive Requirements

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Mô tả tương tự - IRHNJ57230

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRHNJ57130	130Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ597130	122Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ9130	126Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ67134	193Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
	IRHNJ7430SE	122Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ67230	144Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
	IRHNJ7230	129Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ7330SE	114Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ57133SE	178Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
	IRHNJ57230SE	125Kb / 8P	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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