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LM4881 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
6.0V
Storage Temperature
−65˚C to +150˚C
Input Voltage
−0.3V to V
DD + 0.3V
Power Dissipation (Note 4)
Internally limited
ESD Susceptibility (Note 5)
3500V
ESD Susceptibility (Note 6)
250V
Junction Temperature
150˚C
Soldering Information (Note 1)
Small Outline Package
Vapor Phase (60 seconds)
215˚C
Infrared (15 seconds)
220˚C
Thermal Resistance
θ
JC (MSOP)
56˚C/W
θ
JA (MSOP)
210˚C/W
θ
JC (SOP)
35˚C/W
θ
JA (SOP)
170˚C/W
θ
JC (DIP)
37˚C/W
θ
JA (DIP)
107˚C/W
Operating Ratings
Temperature Range
T
MIN ≤ TA ≤ TMAX
−40˚C
≤ T
A ≤ 85˚C
Supply Voltage
2.7V
≤ V
DD ≤ 5.5V
Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli-
ability” for other methods of soldering surface mount devices.
Electrical Characteristics (Notes 2, 3)
The following specifications apply for V
DD = 5V unless otherwise specified. Limits apply for TA = 25C.
Symbol
Parameter
Conditions
LM4881
Units (Limits)
Typ (Note 7)
Limit (Note 8)
V
DD
Power Supply Voltage
2.7
V (min)
5.5
V (max)
I
DD
Quiescent Current
V
IN = 0V, IO = 0A
3.6
6.0
mA (max)
I
SD
Shutdown Current
V
PIN1 =VDD
0.7
5
µA (max)
V
OS
Offset Voltage
V
IN = 0V
5
50
mV (max)
P
O
Output Power
THD = 0.1% (max);f=1 kHz;
R
L =8Ω
200
125
mW (min)
R
L =16Ω
150
mW
R
L =32Ω
85
mW
THD+N=10%;f=1 kHz;
R
L =8Ω
300
mW
R
L =16Ω
200
mW
R
L =32Ω
110
mW
THD+N
Total Harmonic Distortion +
Noise
R
L =16Ω,P O = 120 mWrms;
0.025
%
R
L =32Ω,PO = 75 mWrms;
f=1kHz
0.02
%
PSRR
C
B = 1.0 µF, VRIPPLE = 200
mVrms, f = 120Hz
50
dB
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