US2351G-S08-R datasheet(4/6 Pages) UTC

4 / 6 page

US2351

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R129-011.a



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Voltage (Off State)

-0.3~BVdss

VDD Voltage

-0.3~40

VDD Zener Clamp Continuous Current

COMP Voltage

-0.3~7

CS Input Voltage

-0.3~7

Operating Junction Temperature

-40~150

°C

Storage Temperature

TSTG

-55~150

°C

Lead Temperature (Soldering, 10secs)

260

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, VDD=12V, if not otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX

UNIT

Supply Voltage (VDD) Section

Standby Current

IDD ST

VDD=13V

μA

Operation Current

IDD OP

Operation Supply Current CS=0V,

VDD=12V

1.5

2.5

VDD Under Voltage Lockout

Enter

UVLO(ON)

VDD Falling

7.8

8.6

VDD Under Voltage Lockout

Exit

UVLO (OFF)

VDD Rising

12.5

13.5

14.5

Over Voltage Protection

Threshold

OVP

Ramp VDD Until Gate Shut Down

27.5

In Normal Regulation, VDD will

be Regulated to 12V

VDD

Ramp VDD Until Comp Voltage Lower

than 2.5V

Current Sense Input Section

LEB Time

TLEB

200

Over Current Threshold

VTH_OC

910

940

970

OCP Propagation Delay

TD_OC

110

Input Impedance

ZSENSE_IN

KΩ

Frequency Section

IC Maximum Frequency

Freq_Max

KHz

Frequency Shuffling Range

△

f/Freq

+/-6

Error Amplifier Section

DC Gain of EA

Gain

Max. Cable Compensation

Current

I_COMP_MAX VDD=12V, Comp=0V

μA

Power MOSFET Section

MOSFET Drain-Source

Breakdown Voltage

BVDSS

600

On Resistance

RDS(ON)

Ω

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