Silicon Schottky Diode

Rev. V1

SMS201

1

1

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DC-xxxxxxx

1

Features

 Small Footprint, only 50 x 30 mils.

 Simplest Broadband Detector as no DC bias

Required

 Very Low Barrier Height, Good Sensitivity,

-54 dBm, also Low Flick Noise

 Very Low Parasitic Package Inductance and Low

Package Capacitance

 RoHS* Compliant

Description

The SMS201 is a silicon Schottky diode in a molded

plastic DFN package. It is designed for a broadband

zero bias detector. It has a high cutoff frequency and

can be used beyond 26.5 GHz for power detection

up to 10 dBm.

* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

V

1

—

—

mV

60

80

120

pF

—

0.08

0.10

Ω

2000

4000

8000

NF -3 dB, 10 GHz

dBm

—

-54

—

Voltage Sensitivity (y)

—

8000

—

Absolute Maximum Ratings

Parameter

Absolute Maximum

Reverse DC Voltage

1 V

Forward Current

20 mA

Dissipated Power

100 mW

(de-rated to 0 @ +175°C)

Junction Temperature

+175°C

Storage Temperature

-65°C to +150°C

Solder Temperature

+260°C

per JEDEC J-STD-20C

Case 0503 - Molded Plastic DFN Package

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

These

electronic

devices

are

sensitive

to

electrostatic discharge (ESD) and can be damaged

by static electricity. Proper ESD control techniques

should be used when handling these (HBM) Class 0

devices.