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MMBT5088L bảng dữ liệu(PDF) 2 Page - ON Semiconductor

tên linh kiện MMBT5088L
Giải thích chi tiết về linh kiện  Low Noise Transistors
PDF  5 Pages
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBT5088L bảng dữ liệu(HTML) 2 Page - ON Semiconductor

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MMBT5088L, MMBT5089L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088L
MMBT5089L
V(BR)CEO
30
25
−
−
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088L
MMBT5089L
V(BR)CBO
35
30
−
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
MMBT5088L
(VCB = 15 Vdc, IE = 0)
MMBT5089L
ICBO
−
−
50
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
MMBT5088L
(VEB(off) = 4.5 Vdc, IC = 0)
MMBT5089L
IEBO
−
−
50
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
MMBT5088L
MMBT5089L
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088L
MMBT5089L
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT5088L
MMBT5089L
hFE
300
400
350
450
300
400
900
1200
−
−
−
−
−
Collector − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
−
0.5
Vdc
Base − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
−
0.8
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
−
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Ccb
−
4.0
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Ceb
−
10
pF
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
MMBT5088L
MMBT5089L
hfe
350
450
1400
1800
−
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
MMBT5088L
MMBT5089L
NF
−
−
3.0
2.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model



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