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ZXT2M322TC bảng dữ liệu(PDF) 2 Page - Zetex Semiconductors

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ZXT2M322
ISSUE 2 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
83
°C/W
Junction to Ambient (b)
RθJA
51
°C/W
Junction to Ambient (d)
RθJA
125
°C/W
Junction to Ambient (e)
RθJA
42
°C/W
THERMAL RESISTANCE
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-7.5
V
Peak Pulse Current (c)
ICM
-6
A
Continuous Collector Current (a)
IC
-3.5
A
Base Current
IB
-1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.



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