9012P datasheet(1/2 Pages) YEASHIN

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120705

9012P-Q-R-S

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

20

V

Collector-Base Voltage

VCBO

40

V

Emitter-Base Voltage

VEBO

5V

Collector current-continuoun

IC

500

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,

P D

225

mW

1.8

mW/

oC

Thermal Resistance, Junction to Ambient

R JA

556

oC/W

PD

300

mW

2.4

mW/

oC

Thermal Resistance, Junction to Ambient

R θJA

417

oC/W

Junction and Storage Temperature

Tj ,Tstg

-55 to +150

oC

DEVICE MARKING

ELECTRICAL CHARACTERISTICS (TA

=25

oC unless otherwise noted)

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

20

-

V

(IC=1.0mA)

Emitter-Base Breakdown Voltage

V(BR)EBO

5-

-

V

(IE=100

Collector-Base Breakdown Voltage

V(BR)CBO

40

-

V

(IC=100

A)

Collector Cutoff Current (VCB=35V)

ICBO

--

150

nA

Emitter Cutoff Current (VBE=4V)

IEBO

150

nA

Characteristic

Total Device Dissipation

Derate above 25

oC

Rating

TA=25

oC

Derate above 25

oC

Alumina Substrate, TA=25

oC

Characteristic

SOT-23 (TO-236AB)

2

EMITTER

3

COLLECTOR

1

BASE

θ

A)

µ

FEATURE

ORDERING INFORMATION

Device

Shipping

SOT-23

Package

9012P=12P

9012Q=12Q

9012R=12R

9012S=12S

We declare that the material of product compliance with RoHS requirements.

9012X

3000/Tape&Reel

H

Số phần tương tự - 9012P

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