2. Ambient operational temperature TA=25°C unless noted

3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb)

= 25°C calculated from measured data.

1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id and

Pin were determined at an ambient temperature of 25°C unless noted otherwise.

Sym

Parameters/Condition

Unit

Max

Vd

Drain to Ground Voltage

V

5.5

Id

Drain Current

mA

100

Pin

RF CW Input Power Max

dBm

10

Tch

Max channel temperature

C

+150

Tstg

Storage temperature

C

-65 +150

Tmax

Maximum Assembly Temp

C

260 for 20s

Sym

Parameter and Test Condition

Unit

Min

Typ

Max

Idd

Drain Supply Current under any RF power drive and temp.

mA

65

90

Vdd

Drain Supply Voltage

V

3

5

qjc

C/W

27

Symbol

Parameters and Test Conditions

Units

Frequency

Minimum

Typical

Maximum

Gain

RF Small Signal Gain

dB

18

20.5

23

NF

Noise Figure into 50

Ω

dB

18

2.4

2.6

RLin

Input Return Loss

dB

-10

RLout

Output Return Loss

dB

-13

Iso

Isolation

dB

45

Output Power at 1dB Gain Compression

dBm

8

OIP3

Output Third Order Intercept Point

dBm

19

Typical Distribution of Conversion Gain and Output Power based on 1000 parts

4. Specifications are derived from measurements in a 50

Ω test environment. Aspects of the amplifier performance may be improved over a nar-

rower bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.

5. All tested parameters guaranteed with measurement accuracy +/-0.5dB for NF and +/-1dB for gain.

NF at 18GHz

Gain at 18GHz

StDev = 0.57

StDev = 0.07