TPCP8BA1

Silicon P Channel MOS Type (U-MOS-II) / Silicon Epitaxial Schottky Barrier Diode

TPCP8BA1

○ DC-DC Converter

Combined Pch MOSFET and Schottky Diode into one Package.

•

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

−20

V

Gate-Source voltage

±12

V

DC

−1.3

Drain current

Pulse

−2.6

A

Drain power dissipation

1.0

W

Channel temperature

150

°C

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

30

V

Reverse voltage

25

V

Average forward current

0.7

A

Peak one cycle surge forward current

(non-repetitive)

4 (50 Hz)

A

Junction temperature

125

°C

単位: mm

JEDEC



JEITA



TOSHIBA TOSHIBA

Weight:

mg (typ)

1:Anode

2:N/C

3:Source

4:Gate

5,6:Drain

7,8:Cathode

TENTATIVE

Characteristics

Symbol

Rating

Unit

Storage temperature

−55~125

°C

Operating temperature

(Note 3)

−40~85

°C

Note 1:

Mounted on FR4 board

(25.4 mm

Note 2:

The pulse width limited by max channel temperature.

Note 3:

Operating temperature limited by max channel temperature and max junction temperature.

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the

environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use

containers and other objects that are made of anti-static materials.

the board material, board area, board thickness and pad area. When using this device, please take heat

dissipation fully into account.

2003-12-19

1