LM359 datasheet(2/24 Pages) NSC

2 / 24 page

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

22 V

or ±11 V

Power Dissipation (Note 2)

J Package

N Package

750 mW

Maximum T

J Package

+150˚C

N Package

+125˚C

Thermal Resistance

J Package

147˚C/W still air

110˚C/W with 400 linear feet/min air flow

N Package

100˚C/W still air

75˚C/W with 400 linear feet/min air flow

Input Currents, I

IN(+) or IIN(−)

10 mA

Set Currents, I

SET(IN) or ISET(OUT)

2mA

Operating Temperature Range

LM359

0˚C to +70˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature

(Soldering, 10 sec.)

260˚C

Soldering Information

Dual-In-Line Package

Soldering (10 sec.)

260˚C

Small Outline Package

Vapor Phase (60 sec.)

215˚C

Infrared (15 sec.)

220˚C

See AN-450 “Surface Mounting Methods and Their Effect

on Product Reliability” for other methods of soldering

surface mount devices.

ESD rating to be determined.

Electrical Characteristics

SET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25˚C unless otherwise noted

Parameter

Conditions

LM359

Units

Min

Typ

Max

Open Loop Voltage

supply = 12V, RL = 1k, f = 100 Hz

Gain

A = 125˚C

Bandwidth

IN = 1kΩ,Ccomp = 10 pF

MHz

Unity Gain

Gain Bandwidth Product

IN = 50Ω to 200Ω

200

400

MHz

Gain of 10 to 100

Slew Rate

Unity Gain

IN = 1kΩ,Ccomp = 10 pF

V/µs

Gain of 10 to 100

IN < 200Ω

V/µs

Amplifier to Amplifier

f = 100 Hz to 100 kHz, R

L = 1k

−80

Coupling

Mirror Gain

at 2 mA I

IN(+), ISET = 5 µA, TA = 25˚C

0.9

1.0

1.1

µA/µA

(Note 3)

at 0.2 mA I

IN(+), ISET = 5 µA

0.9

1.0

1.1

µA/µA

Over Temp.

at 20 µA I

IN(+), ISET = 5 µA

0.9

1.0

1.1

µA/µA

Over Temp.

∆Mirror Gain

at 20 µA to 0.2 mA I

IN(+)

(Note 3)

Over Temp, I

SET = 5µA

Input Bias Current

Inverting Input, T

A = 25˚C

µA

Over Temp.

µA

Input Resistance (

βre)

Inverting Input

2.5

Ω

Output Resistance

OUT = 15 mA rms, f = 1 MHz

3.5

Ω

Output Voltage Swing

L = 600Ω

OUT High

IN(−) and IIN(+) Grounded

9.5

10.3

OUT Low

IN(−) = 100 µA, IIN(+) = 0

LM359 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

LM359 bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI)

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

bảng dữ liệu tải về

Link URL