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2SD882SL-Q-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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2SD882SL-Q-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 2SD882S NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R208-007,C ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V DC IC 3 A Collector Current Pulse ICP 7 A Base Current IB 0.6 A SOT-89 0.5 W SOT-223 1 W Power Dissipation TO-92 PD 0.5 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 30 V Emitter-Base Breakdown Voltage BVEBO IE=100µA, IC=0 5 V Collector Cut-off Current ICBO VCB=30V, IE=0 1000 nA Emitter Cut-off Current IEBO VEB=3V, IC=0 1000 nA hFE1 VCE=2V, IC=20mA 30 200 DC Current Gain (Note 1) hFE2 VCE=2V, IC=1A 100 150 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=2A, IB=0.2A 0.3 0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=2A, IB=0.2A 1.0 2.0 V Current Gain Bandwidth Product fT VCE=5V, IC=0.1A 80 MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz 45 pF Note 1: Pulse test: PW<300 µs, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK Q P E RANGE 100-200 160-320 200-400 |
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