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FFP30S65S bảng dữ liệu(PDF) 1 Page - Micross Components |
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FFP30S65S bảng dữ liệu(HTML) 1 Page - Micross Components |
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1 / 3 page ![]() Further Information - Contact your Micross sales office or email your enquiry to baredie@micross.com Part VRRM IF(AV)n VF Typ trr Typ Die Size FFP30S65S 650V 30A 2.1V 47ns 3.3 x 3.3 mm 2 See page 2 for ordering part numbers & supply formats Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 650 V VRWM Working Peak Reverse Voltage 650 V VR DC Blocking Voltage 650 V IF(AV) Average Rectified Forward Current @ TC = 100°C 1 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 180 A TJ, TSTG Operation Junction & Storage Temperature -55 to 175 °C FFP30S65S STEALTH™ Rectifier Diode Chip 650V, 30A, VF 2.1V, trr = 47ns Applications • General Purpose • Free Wheeling Diode Features • Exceptionally Soft Recovery • Low Reverse Recovery Current • 175°C rated, optimised for low loss performance Maximum Ratings Symbol Parameter Test Conditions Min Typ Max Units VF Forward Voltage 2 IF = 30A TC = 25°C - 2.1 2.6 V TC = 175°C - 1.7 - IR Reverse Current 2 VR = 665V TC = 25°C - - 10 µA Erec Reverse Recovery Energy 3 IF =30A, dI/dt =200A/µs TC = 175°C - 127 - uJ trr Reverse Recovery Time 3 TC = 25°C - 47 - ns TC = 175°C - 212 - Irr Reverse Recovery Current 3 TC = 25°C - 3.7 - A TC = 175°C - 8.8 - Qrr Reverse Recovery Charge 3 TC = 25°C - 87 - nC TC = 175°C - 933 - Electrical Characteristics, TJ = 25° unless otherwise noted Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Pulse: Test Pulse width = 300µs, Duty Cycle = 2% 3. Tested in discrete package, not subject to 100% production test at wafer level ©2014 Fairchild Semiconductor Corporation & Micross Components |
Số phần tương tự - FFP30S65S |
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Mô tả tương tự - FFP30S65S |
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