ASJD1200R045 datasheet(2/4 Pages) MICROSS

2 / 4 page

SiC JFET

ASJD1200R045

Rev. 0.1 06/11

Micross Components reserves the right to change products or speciﬁcations without notice.

ADVANCE INFORMATION

Min

Typ

Max

Drain Source Blocking Voltage

BVDS

VGS = 15 V, ID = 600 A

1200

VDS = 1200 V, VGS = 15 V,

Tj = 25

220

VDS = 1200 V, VGS = 15 V,

Tj = 150

400

VGS = 15 V, VDS = 0V

0.1

0.6

VGS = 15 V, VDS = 1200V

0.1

ID = 40 A, VGS = 2 V,

Tj = 25 °C

0.035

0.045

ID = 40 A, VGS = 2 V,

Tj = 100 °C

0.07

Gate Threshold Voltage

VGS(th)

VDS = 1 V, ID = 34mA

6.00

4.00

Gate Forward Current

IGFWD

VGS = 2 V

f = 1 MHz, drain source shorted

RG(on)

VGS >2.7V

0.25

Input Capacitance

Ciss

1340

Output Capacitance

Coss

206

Reverse Transfer Capacitance

Crss

194

Effective Output Capacitance,

energy related

Co(er)

VDS = 0 V to 600 V,

VGS = 0 V

110

Turn On Delay

ton

TBD

Rise Time

TBD

Turn Off Delay

toff

TBD

Fall Time

TBD

Turn On Energy

Eon

TBD

Turn Off Energy

Eoff

TBD

Total Switching Energy

Ets

TBD

Turn On Delay

ton

TBD

Rise Time

TBD

Turn Off Delay

toff

TBD

Fall Time

TBD

Turn On Energy

Eon

TBD

Turn Off Energy

Eoff

TBD

Total Switching Energy

Ets

TBD

Total Gate Charge

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

VDS = 600 V, ID = 40 A,

Inductive Load, TJ = 150

VDS = 600V, ID = 5 A,

VGS = + 2.5 V

μJ

Dynamic Characteristics

VDD = 100 V

Switching Characteristics

VDS = 600 V, ID = 40 A,

Inductive Load, TJ = 25

On Characteristics

Drain Source On resistance

Gate Resistance

RDS(on)

Total Gate Reverse Leakage

IGSS

μA

Total Drain Leakage Current

IDSS

Off Characteristics

Value

Unit

Symbol

Parameter

Conditions

ELECTRICAL CHARACTERISTICS

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