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TLE7186F bảng dữ liệu(PDF) 13 Page - Infineon Technologies AG

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TLE7186F
MOSFET Driver
Data Sheet
13
Rev. 1.2, 2016-01-28
5.3
Bootstrap Principle
The TLE7186F provides a bootstrap based supply for its high side output stages. The benefit of this principle is a
fast switching of the high side switches - supporting active freewheeling in high side.
The bootstrap capacitors are charged by switching on the external low side MOSFETs connecting the bootstrap
capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor. If the low
side MOSFET is switched off and the high side MOSFET is switched on, the bootstrap capacitor will float together
with the SHx voltage to the supply voltage of the bridge. Under this condition the supply current of the high side
output stage will discharge the bootstrap capacitor. This current is specified. The size of the capacitor together
with this current will determine how long the high side MOSFET can be kept on without recharging the bootstrap
capacitor.
When all external MOSFETs are switched off, the SHx voltage can be undefined. Under this condition, the
bootstrap capacitors can be discharged, dependent on the SHx voltage.
5.4
Currents at SH pins
The currents at the SH pins can be used for diagnostic purposes to check the health state of the power stage.
The simplified structure related to the SH currents the TLE7186F is described by Figure 4.
Figure 4
Block Diagram of SHx pin configuration
5.5
Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V
S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)1)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.
Inputs
5.5.1
Low level input voltage of ILx; IHx
V
I_LL
––
1.6
V
–
5.5.2
High level input voltage of ILx; IHx
V
I_HL
2.8
––V
–
5.5.3
Input hysteresis of IHx; ILx2)
d
VI
100
––mV
–
5.5.4
IHx pull-up resistors to VDD
R
IH
28.5
–
76.5
k
Ω
–
5.5.5
ILx pull-down resistors to GND
R
IL
178.5
–
564
k
Ω
–
VDH
SHx
IBSH
SL
RSHGN
BHx
40µA
80k
Ω



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