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TSU111ICT bảng dữ liệu(PDF) 17 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS operational amplifier
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TSU111
Application information
DocID029790 Rev 2
17/30
5.1.1
Schematic optimization aiming for nanopower
To benefit from the full performance of the TSU111, the impedances must be maximized so
that current consumption is not lost where it is not required.
For example, an aluminum electrolytic capacitance can have significantly high leakage.
This leakage may be greater than the current consumption of the op amp. For this reason,
ceramic type capacitors are preferred.
For the same reason, big resistor values should be used in the feedback loop. However,
there are two main limitations to be considered when choosing a resistor.
1.
Noise generated: a 100 kΩ resistor generates 40 nV/√Hz, a bigger resistor value
generates even more noise.
2.
Leakage on the PCB: leakage can be generated by moisture. This can be improved by
using a specific coating process on the PCB.
5.1.2
PCB layout considerations
For correct operation, it is advised to add 10 nF decoupling capacitors as close as possible
to the power supply pins.
Minimizing the leakage from sensitive high impedance nodes on the inputs of the TSU111
can be performed with a guarding technique. The technique consists of surrounding high
impedance tracks by a low impedance track (the ring). The ring is at the same electrical
potential as the high impedance node.
Therefore, even if some parasitic impedance exists between the tracks, no leakage current
can flow through them as they are at the same potential (see Figure 33: "Guarding on the
PCB").
Figure 33: Guarding on the PCB



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