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TSU111 bảng dữ liệu(PDF) 22 Page - STMicroelectronics |
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TSU111 bảng dữ liệu(HTML) 22 Page - STMicroelectronics |
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22 / 30 page ![]() Application information TSU111 22/30 DocID029790 Rev 2 5.8 ESD structure of the TSU111 The TSU111 is protected against electrostatic discharge (ESD) with dedicated diodes (see Figure 36: "ESD structure"). These diodes must be considered at application level especially when signals applied on the input pins go beyond the power supply rails (VCC+) or (VCC-). Figure 36: ESD structure Current through the diodes must be limited to a maximum of 10 mA as stated in Table 1: "Absolute maximum ratings (AMR)". A serial resistor on the inputs can be used to limit this current. 5.9 EMI robustness of nanopower devices Nanopower devices exhibit higher impedance nodes and consequently they are more sensitive to EMI. To improve the natural robustness of the TSU111 device, we recommend to add three capacitors of around 22 pF each between the two inputs, and between each input and ground. These capacitors will lower the impedance of the input at high frequencies and therefore reduce the impact of the radiation. TSU111 + - |
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