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STGWA50M65DF2 bảng dữ liệu(PDF) 6 Page - STMicroelectronics

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STGWA50M65DF2 bảng dữ liệu(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGWA50M65DF2
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DocID028694 Rev 2
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 50 A, VR = 400 V,
VGE = 15 V
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
-
162
-
ns
Qrr
Reverse recovery charge
-
1.37
-
µC
Irrm
Reverse recovery current
-
19
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
420
-
A/µs
Err
Reverse recovery energy
-
192
-
µJ
trr
Reverse recovery time
IF = 50 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
-
262
-
ns
Qrr
Reverse recovery charge
-
5.1
-
µC
Irrm
Reverse recovery current
-
34
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
160
-
A/µs
Err
Reverse recovery energy
-
676
-
µJ



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