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STM32L072X8 bảng dữ liệu(PDF) 65 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  Ultra-low-power 32-bit MCU ARM-based Cortex-M0, up to 192KB Flash, 20KB SRAM, 6KB EEPROM, USB, ADC, DACs
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STM32L072xx
Electrical characteristics
117
6.3.3
Embedded internal reference voltage
The parameters given in Table 29 are based on characterization results, unless otherwise
specified.
VPVD6
PVD threshold 6
Falling edge
2.97
3.05
3.09
V
Rising edge
3.08
3.15
3.20
Vhyst
Hysteresis voltage
BOR0 threshold
-
40
-
mV
All BOR and PVD thresholds
excepting BOR0
-100
-
1. Guaranteed by characterization results.
2. Valid for device version without BOR at power up. Please see option "D" in Ordering information scheme for more details.
Table 27. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 28. Embedded internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at
temperature of 25 °C
VDDA= 3 V
0x1FF8 0078 - 0x1FF8 0079
Table 29. Embedded internal reference voltage(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT out(2)
Internal reference voltage
– 40 °C < TJ < +125 °C 1.202
1.224
1.242
V
TVREFINT
Internal reference startup time
-
-
2
3
ms
VVREF_MEAS
VDDA and VREF+ voltage during
VREFINT factory measure
-2.99
3
3.01
V
AVREF_MEAS
Accuracy of factory-measured
VREFINT value(3)
Including uncertainties
due to ADC and
VDDA/VREF+ values
--
±5
mV
TCoeff(4)
Temperature coefficient
–40 °C < TJ < +125 °C
-
25
100
ppm/°C
ACoeff(4)
Long-term stability
1000 hours, T= 25 °C
-
-
1000
ppm
VDDCoeff(4)
Voltage coefficient
3.0 V < VDDA < 3.6 V
-
-
2000
ppm/V
TS_vrefint(4)(5)
ADC sampling time when
reading the internal reference
voltage
-5
10
-
µs
TADC_BUF(4)
Startup time of reference
voltage buffer for ADC
--
-
10
µs
IBUF_ADC(4)
Consumption of reference
voltage buffer for ADC
-
-
13.5
25
µA
IVREF_OUT(4)
VREF_OUT output current(6)
--
-
1
µA
CVREF_OUT(4)
VREF_OUT output load
-
-
-
50
pF



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