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STM32F745VG bảng dữ liệu(PDF) 127 Page - STMicroelectronics

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STM32F745VG bảng dữ liệu(HTML) 127 Page - STMicroelectronics

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STM32F745xx STM32F746xx
Electrical characteristics
195
5.3.10
Internal clock source characteristics
The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 17.
High-speed internal (HSI) RC oscillator
Figure 34. HSI deviation versus temperature
1. Guaranteed by characterization results.
Table 41. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user trimming step(2)
2. Guaranteed by design.
--
-
1
%
Accuracy of the HSI oscillator
TA = –40 to 105 °C(3)
3. Guaranteed by characterization results.
− 8-4.5
%
TA = –10 to 85 °C(3)
− 4-
4
%
TA = 25 °C(4)
4. Factory calibrated, parts not soldered.
− 1-
1
%
tsu(HSI)(2) HSI oscillator startup time
-
-
2.2
4
µs
IDD(HSI)(2) HSI oscillator power consumption
-
-
60
80
µA



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