ATF33143 datasheet(4/14 Pages) HP

4 / 14 page

ATF-33143 Typical Performance Curves

Notes:

1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V

80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on

production test board requirements. Circuit losses have been de-embedded from actual measurements.

2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease

depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches

P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant

current source as is typically done with active biasing.

Figure 8. P1dB vs. Bias [1,2] at 2 GHz.

Figure 9. P1dB vs. Bias [1,2] Tuned for NF

@ 4V, 80mA at 900MHz.

Figure 10. NF and Ga vs. Bias [1] at

2GHz.

Figure 11. NF and Ga vs. Bias [1] at

900 MHz.

IDSQ (mA)

Figure 6. OIP3, IIP3 vs. Bias [1] at

2GHz.

120

100

2 V

3 V

4 V

IDSQ (mA)

Figure 7. OIP3, IIP3 vs. Bias [1] at

900 MHz.

2 V

3 V

4 V

120

100

IDSQ (mA)

2 V

3 V

4 V

120

100

IDSQ (mA)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

2 V

3 V

4 V

120

100

IDSQ (mA)

1.2

1.0

0.8

0.6

0.4

0.2

2 V

3 V

4 V

120

100

IDSQ (mA)

2 V

3 V

4 V

120

100

88759/05-2.PM6.5J

2001.04.26, 9:12 AM

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