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F206NIA200SA-M105F bảng dữ liệu(PDF) 3 Page - Vincotech |
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F206NIA200SA-M105F bảng dữ liệu(HTML) 3 Page - Vincotech |
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3 / 24 page ![]() F206NIA200SA-M105F preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,05 1,51 1,85 Tj=150°C 1,75 Tj=25°C 0,66 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 240 Tj=150°C 245 Tj=25°C 42 Tj=150°C 42 Tj=25°C 310 Tj=150°C 341 Tj=25°C 71 Tj=150°C 104 Tj=25°C 3,14 Tj=150°C 4,22 Tj=25°C 6,14 Tj=150°C 7,89 Thermal resistance chip to heatsink per chip RthJH 0,39 Thermal resistance chip to case per chip RthJC 0,26 Tj=25°C 1,5 1,77 3,3 Tj=125°C 1,89 Tj=25°C 136 Tj=125°C 172 Tj=25°C 137 Tj=125°C 269 Tj=25°C 8,5 Tj=125°C 16,2 di(rec)max Tj=25°C 3158 /dt Tj=125°C 2901 Tj=25°C 2,02 Tj=125°C 3,66 Thermal resistance chip to heatsink per chip RthJH 0,60 Thermal resistance chip to case per chip RthJC 0,40 768 Ω mWs pF ns 1 Tj=25°C Tj=25°C 2100 A V nA ns mA V 12320 Reverse recovered energy Peak rate of fall of recovery current 20 Fall time Turn-off delay time Turn-on delay time Rgoff=4 Ω ±15 200 0,0032 0 15 Integrated Gate resistor Buck IGBT Gate emitter threshold voltage Collector-emitter cut-off current incl. Diode Gate-emitter leakage current Turn-on energy loss per pulse Reverse recovered charge Reverse recovery time Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Buck Diode μC mWs A/ μs 366 Characteristic Values Value Conditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Rise time VGE(th) VCE(sat) ICES Rgint Erec Coss IRRM Crss VF QGate tr td(off) f=1MHz Rgon=4 Ω IGES tf Eon Eoff td(on) VCE=VGE Cies Qrr trr Rgoff=4 Ω 15 ±15 0 200 200 nC V 200 200 350 600 0 25 350 700 Thermal grease thickness ≤50um λ = 1 W/mK Thermal grease thickness ≤50um λ = 1 W/mK K/W K/W 3 Revision: 4 Copyright by Vincotech |
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