STM32L011X3 datasheet(49/115 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L011x3/4

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DocID027973 Rev 4

6.3.2

Embedded reset and power control block characteristics

The parameters given in the following table are derived from the tests performed under the

ambient temperature condition summarized in Table 18.

Temperature range

Maximum power

dissipation (range 6)

–40

°C

Maximum power

dissipation (range 7)

–40

105

Maximum power

dissipation (range 3)

–40

125

Junction temperature range (range 6)

-40 °C

≤ TA ≤ 85 °

–40

105

Junction temperature range (range 7)

-40 °C

≤ TA ≤ 105 °C

–40

125

Junction temperature range (range 3)

-40 °C

≤ TA ≤ 125 °C

–40

130

1. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and

VDDA can be tolerated during power-up and normal operation.

2. To sustain a voltage higher than VDD+0.3V, the internal pull-up/pull-down resistors must be disabled.

3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJ max (see Table 17: Thermal characteristics

on page 47).

Table 18. General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Table 19. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

tVDD(1)

VDD rise time rate

BOR detector enabled

∞

µs/V

BOR detector disabled

1000

VDD fall time rate

BOR detector enabled

∞

BOR detector disabled

1000

TRSTTEMPO(1) Reset temporization

VDD rising, BOR enabled

3.3

VDD rising, BOR disabled(2)

0.4

0.7

1.6

VPOR/PDR

Power on/power down reset

threshold

Falling edge

1.5

1.65

Rising edge

1.3

1.5

1.65

VBOR0

Brown-out reset threshold 0

Falling edge

1.67

1.7

1.74

Rising edge

1.69

1.76

1.8

VBOR1

Brown-out reset threshold 1

Falling edge

1.87

1.93

1.97

Rising edge

1.96

2.03

2.07

VBOR2

Brown-out reset threshold 2

Falling edge

2.22

2.30

2.35

Rising edge

2.31

2.41

2.44

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