HCS60R092E datasheet(1/7 Pages) SEMIHOW

tên linh kiện	HCS60R092E

Giải thích chi tiết về linh kiện	600V N-Channel Super Junction MOSFET

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Very Low FOM (R

DS(on) XQg)

Extremely low switching loss

Excellent stability and uniformity

100% Avalanche Tested

TO-220F

Parameter

Value

Unit

BVDSS @Tj,max

650

V

ID

40

A

RDS(on), max

92

Qg,Typ

45

nC

Key Parameters

Package & Internal Circuit

HCS60R092E

600V N-Channel Super Junction MOSFET

Features

Application

PC Power

Server Power Supply

Telecom

Solar Inverter

Super Charger for Automobiles

July 2016

D

G

S

* Drain current limited by maximum junction temperature

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

3.6

/W

R

JA

Junction-to-Ambient

--

62.5

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

600

V

GS

Gate-Source Voltage

30

V

I

D

Drain Current

– Continuous (T

C = 25

)

40 *

A

Drain Current

– Continuous (T

C = 100

)

25 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

120 *

A

E

AS

Single Pulsed Avalanche Energy

(Note 2)

1000

mJ

dv/dt

MOSFET dv/dt ruggedness, V

DS=0…480V

50

V/ns

dv/dt

Reverse diode dv/dt, V

DS=0…480V, IDS ID

15

V/ns

P

D

Power Dissipation

35

W

T

J, TSTG

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Absolute Maximum Ratings

T

C=25

unless otherwise specified

Số phần tương tự - HCS60R092E

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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