RSS050P03 datasheet(2/5 Pages) ROHM

2 / 5 page

RSS050P03

Transistors

Rev.A

2/4

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

Typ.

Max.

Unit

Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

Ciss

Coss

Crss

td (on)

td (off)

Qgs

Qgd

Body diode characteristics (source-drain characteristics)

VSD

−−

−1.2

Forward voltage

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Min.

Typ.

Max.

Unit

Conditions

= −1.6A, VGS=0V

−−

±10

µAVGS=±20V, VDS=0V

VDD

−15V

−30

−−

VID

= −1mA, VGS=0V

−−

−1

µAVDS= −30V, VGS=0V

−1.0

−−2.5

VDS

= −10V, ID= −1mA

−

= −5.0A, VGS= −10V

−

Ω

= −2.5A, VGS= −4.5V

−

= −2.5A, VGS= −4.0V

5.0

−−

SVDS

= −10V, ID= −2.5A

−

1200

−

VDS

= −10V

−

250

180

−

VGS

=0V

−

=1MHz

−

2.8

−

5.0

−

VGS

= −5V

−−

= −5.0A

VDD

−15V

= −2.5A

VGS

= −10V

=6Ω

RGS

=10Ω

∗Pulsed

∗

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