6ED003L02-F2 datasheet(13/20 Pages) INFINEON

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EiceDRIVER™

6ED003L06-F2, 6ED003L02-F2

datasheet

<Revision 2.8>, 05.08.2016

Table 6

Static parameters

Parameter

Symbol

Values

Unit

Test condition

Min.

Typ.

Max.

High side leakage current betw. VS and VSS ILVS+

12.5

µA

VS = 600V

High side leakage current betw. VS and VSS ILVS+

TJ = 125°C,

VS = 600V

High side leakage current between VSx and

VSy (x=1,2,3 and y=1,2,3)

ILVS–

TJ = 125°C

VSx - VSy = 600V

Quiescent current VBS supply (VB only)

IQBS1

210

400

µA

HO=low

Quiescent current VBS supply (VB only)

IQBS2

210

400

HO=high

Quiescent current VCC supply (VCC only)

IQCC1

1.1

1.8

VLIN=float.

Quiescent current VCC supply (VCC only)

IQCC2

1.3

VLIN=0, VHIN=3.3 V

Input bias current

ILIN+

100

µA

VLIN=3.3 V

Input bias current

ILIN-

110

200

µA

VLIN=0

Input bias current

IHIN+

100

VHIN=3.3 V

Input bias current

IHIN-

110

200

VHIN=0

Input bias current (ITRIP=high)

IITRIP+

120

VITRIP=3.3 V

Input bias current (EN=high)

IEN+

120

VENABLE=3.3 V

Input bias current RCIN (internal current

source)

IRCIN

2.8

VRCIN = 2 V

Mean output current for load capacity

charging in range from 3 V (20%) to 6 V

(40%)

IO+

120

165

CL=10 nF

Peak output current turn on (single pulse)

IOpk+

240

RL = 0 , tp <10 µs

Mean output current for load capacity

discharging in range from 12 V (80%) to 9 V

(60%)

IO-

250

375

CL=10 nF

Peak output current turn off (single pulse)

IOpk-

420

RL = 0 , tp <10 µs

RCIN low on resistance of the pull down

transistor

Ron,RCIN

100

VRCIN=0.5 V

FAULT low on resistance of the pull down

transistor

Ron,FLT

100

VFAULT=0.5 V

1 Not subject of production test, verified by characterisation

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