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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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OPA690 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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OPA690 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 23 page  OPA691 4 SBOS226A www.ti.com ELECTRICAL CHARACTERISTICS: VS = +5V Bolace limits are tested at +25 °C. RF = 453Ω, RL = 100Ω to VS/2, and G = +2, (see Figure 2 for AC performance only), unless otherwise noted. OPA691ID, IDBV TYP MIN/MAX OVER-TEMPERATURE 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C(2) +85 °C(2) UNITS MAX LEVEL(3) AC PERFORMANCE (see Figure 2) Small-Signal Bandwidth (VO = 0.5Vp-p) G = +1, RF = 499Ω 210 MHz typ C G = +2, RF = 453Ω 190 168 160 140 MHz min B G = +5, RF = 340Ω 180 MHz typ C G = +10, RF = 180Ω 155 MHz typ C Bandwidth for 0.1dB Gain Flatness G = +2, VO < 0.5Vp-p 90 40 30 25 MHz min B Peaking at a Gain of +1 RF = 649Ω, VO < 0.5Vp-p 0.2 1 2.5 3.0 dB max B Large-Signal Bandwidth G = +2, VO = 2Vp-p 210 MHz typ C Slew Rate G = +2, 2V Step 850 600 575 550 V/ µsmin B Rise-and-Fall Time G = +2, VO = 0.5V Step 2.0 ns typ C G = +2, VO = 2V Step 2.3 ns typ C Settling Time to 0.02% G = +2, VO = 2V Step 14 ns typ C 0.1% G = +2, VO = 2V Step 10 ns typ C Harmonic Distortion G = +2, f = 5MHz, VO = 2Vp-p 2nd-Harmonic RL = 100Ω to VS/2 –66 –58 –57 –56 dBc max B RL ≥ 500Ω to VS/2 –73 –65 –63 –62 dBc max B 3rd-Harmonic RL = 100Ω to VS/2 –71 –68 –67 –65 dBc max B RL ≥ 500Ω to VS/2 –77 –72 –70 –69 dBc max B Input Voltage Noise f > 1MHz 1.7 2.5 2.9 3.1 nV/ √Hz typ B Noninverting Input Current Noise f > 1MHz 12 14 15 15 pA/ √Hz typ B Inverting Input Current Noise f > 1MHz 15 17 18 19 pA/ √Hz typ B DC PERFORMANCE(4) Open-Loop Transimpedance Gain (ZOL) VO = VS/2, RL = 100Ω to VS/2 200 100 90 80 k Ω min A Input Offset Voltage VCM = 2.5V ±0.5 ±3 ±3.6 ±4.3 mV max A Average Offset Voltage Drift VCM = 2.5V ±12 ±20 µV/°Cmax B Noninverting Input Bias Current VCM = 2.5V +20 +40 +46 +56 µAmax A Average Noninverting Input Bias Current Drift VCM = 2.5V –250 –250 nA/ °Cmax B Inverting Input Bias Current VCM = 2.5V ±5 ±20 ±25 ±35 µAmax A Average Inverting Input Bias Current Drift VCM = 2.5V ±112 ±250 nA / °Cmax B INPUT Least Positive Input Voltage(5) 1.5 1.6 1.7 1.8 V max A Most Positive Input Voltage(5) 3.5 3.4 3.3 3.2 V min A Common-Mode Rejection Ratio (CMRR) VCM = VS/2 54 50 49 48 dB min A Noninverting Input Impedance 100 || 2 k Ω || pF typ C Inverting Input Resistance (RI ) Open-Loop 38 Ω typ C OUTPUT Most Positive Output Voltage No Load 4 3.8 3.7 3.5 V min A RL = 100Ω to VS/2 3.9 3.7 3.6 3.4 V min A Least Positive Output Voltage No Load 1 1.2 1.3 1.5 V max A RL = 100Ω to VS/2 1.1 1.3 1.4 1.6 V max A Current Output, Sourcing VO = VS/2 +160 +120 +100 +80 mA min A Current Output, Sinking VO = VS/2 –160 –120 –100 –80 mA min A Short-Circuit Current VO = VS/2 250 mA typ C Closed-Loop Output Impedance G = +2, f = 100kHz 0.03 Ω typ C DISABLE (Disabled LOW) Power-Down Supply Current (+VS)VDIS = 0 –150 –300 –350 –400 µAmax A Off Isolation G = +2, 5MHz 65 dB typ C Output Capacitance in Disable 4 pF typ C Turn On Glitch G = +2, RL = 150Ω, VIN = VS /2 ±50 mV typ C Turn Off Glitch G = +2, RL = 150Ω, VIN = VS /2 ±20 mV typ C Enable Voltage 3.3 3.5 3.6 3.7 V min A Disable Voltage 1.8 1.7 1.6 1.5 V max A Control Pin Input Bias Current (DIS) VDIS = 0 75 130 150 160 µA typ C POWER SUPPLY Specified Single-Supply Operating Voltage 5 V typ C Max Single-Supply Operating Voltage 12 12 12 V max A Max Quiescent Current VS = +5V 4.5 4.8 5.0 5.2 mA max A Min Quiescent Current VS = +5V 4.5 4.1 4.0 3.8 mA min A Power-Supply Rejection Ratio (–PSRR) Input Referred 55 dB typ C TEMPERATURE RANGE Specification: D, DBV –40 to +85 °C typ C Thermal Resistance, θ JA Junction-to-Ambient DSO-8 125 °C/W typ C DBV SOT23-6 150 °C/W typ C NOTES: (3) Test levels: (A) 100% tested at 25 °C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (1) Junction temperature = ambient for 25 °C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +10 °C at high temperature limit for over-temperature specifications. (3) Test levels: (A) 100% tested at 25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out-of-node. VCM is the input common-mode voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits. |
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