BSC032NE2LS datasheet(3/10 Pages) INFINEON

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BSC032NE2LS

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1200

1596

Output capacitance

C oss

470

625

Reverse transfer capacitance

Crss

Turn-on delay time

t d(on)

3.3

Rise time

t r

2.8

Turn-off delay time

t d(off)

Fall time

t f

2.2

Gate Charge Characteristics

Gate to source charge

Q gs

3.1

4.1

Gate charge at threshold

Q g(th)

1.9

Gate to drain charge

Q gd

1.9

2.9

Switching charge

Q sw

3.1

Gate charge total

Q g

7.7

Gate plateau voltage

V plateau

2.7

Gate charge total

Q g

V DD=12 V, I D=30 A,

V GS=0 to 10 V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

6.7

Output charge

Q oss

V DD=12 V, V GS=0 V

9.4

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

148

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

0.87

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=12 V,

f =1 MHz

V DD=12 V, V GS=10 V,

I D=30 A, R G,ext=1.6 W

V DD=12 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 2.2

page 3

2013-04-29

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