MII100-12A3 datasheet(2/4 Pages) IXYS

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MII 100-12 A3

MID 100-12 A3

MDI 100-12 A3

Symbol

Conditions

Characteristic Values

J = 25

°C, unless otherwise specified)

min.

typ.

max.

(BR)CES

GE = 0 V

1200

GE(th)

C = 3 mA, VCE = VGE

4.5

6.5

CES

= V

CES

J = 25

°C5 mA

J = 125

°C

7.5

GES

= 0 V, V

GE =

±20 V

±300 nA

CE(sat)

C = 75 A, VGE = 15 V

2.2

2.7

ies

5.5

oes

CE = 25 V, VGE = 0 V, f = 1 MHz

0.75

res

0.33

d(on)

100

d(off)

650

12.1

off

10.5

thJC

0.22 K/W

thJS

with heatsink compound

0.44

K/W

Reverse Diode (FRED)

Characteristic Values

J = 25

°C, unless otherwise specified)

min.

typ.

max.

F = 75 A, VGE = 0 V,

2.2

2.5

F = 75 A, VGE = 0 V, TJ = 125

°C

1.7

1.8

C = 25

°C

150

C = 80

°C95

F = 75 A, VGE = 0 V, -diF/dt = 600 A/

ms62

J = 125

°C, V

R = 600 V

200

thJC

0.45 K/W

thJS

with heatsink compound

0.9

K/W

Inductive load, T

J = 125

°C

C = 75 A, VGE = ±15 V

CE = 600 V, RG = 15

Dimensions in mm (1 mm = 0.0394")

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 13.6 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 6.5 mW

Thermal Response

IGBT (typ.)

Cth1 = 0.20 J/K; Rth1 = 0.218 K/W

Cth2 = 0.47 J/K; Rth2 = 0.005 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.14 J/K; Rth1 = 0.443 K/W

Cth2 = 0.26 J/K; Rth2 = 0.009 K/W

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