APM2307 datasheet(2/9 Pages) ANPEC

2 / 9 page

Rev. A.3 - Jun., 2003

www.anpec.com.tw

APM2307

Notes

: Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

: Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

A=25

°C

1.25

Maximum Power Dissipation

A=100

°C

0.5

Maximum Junction Temperature

150

°C

STG

Storage Temperature Range

-55 to 150

°C

θjA

Thermal Resistance – Junction to Ambient

100

°C/W

APM2307

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=-250

µA

-30

IDSS

Zero Gate Voltage Drain

Current

VDS=-24V , VGS=0V

-1

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250

µA

-1

-3

IGSS

Gate Leakage Current

VGS=

±20V , VDS=0V

±100

VGS=-10V , IDS=-3A

100

120

RDS(ON)a

Drain-Source On-state

Resistance

VGS=-4.5V , IDS=-2.5A

140

170

Ω

VSDa

Diode Forward Voltage

ISD=-1.25A , VGS=0V

0.6

1.3

Dynamicb

Total Gate Charge

813

Qgs

Gate-Source Charge

1.9

Qgd

Gate-Drain Charge

VDS=-15V , IDS=-3A

VGS=-10V

1.1

td(ON)

Turn-on Delay Time

Turn-on Rise Time

820

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=-15V , IDS=-1A ,

VGEN=-10V , RG=6

Ω

RL=15

Ω

515

Ciss

Input Capacitance

550

Coss

Output Capacitance

120

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=-25V

Frequency=1.0MHz

Electrical Characteristics (T

A = 25°C unless otherwise noted)

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