ZXMP3F30FH datasheet(3/3 Pages) ZPSEMI

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Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symb

Min.

Typ.

Max.

Unit Conditions

Static

Drain-Source breakdown

voltage

V(BR)DSS

-30

ID = -250μA, VGS=0V

Zero Gate voltage Drain

current

IDSS

-1.0

µA

VDS=-30V, VGS=0V

Gate-Body leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-Source threshold

voltage

VGS(th)

-1.0

ID= -250μA, VDS=VGS

Static Drain-Source

on-state resistance

(*)

RDS(on)

0.080

0.140

Ω

VGS= -10V, ID= -2.5A

VGS= -4.5V, ID= -1.9A

Forward

Transconductance

(*) (†)

gfs

VDS= -15V, ID= -3A

Dynamic

(†)

Input capacitance

Ciss

370

Output capacitance

Coss

Reverse transfer

capacitance

Crss

VDS= -15V, VGS=0V

f=1MHz

Switching

(‡) (†)

Turn-on-delay time

td(on)

1.3

Rise time

2.6

Turn-off delay time

td(off)

Fall time

VDD= -15V, VGS= -10V

ID= -1A

RG ≅ 6.0Ω,

Gate charge

Total Gate charge

Gate-Source charge

Qgs

1.2

Gate-Drain charge

Qgd

1.3

VDS= -15V, VGS= -10V

ID= -3A

Source–Drain diode

Diode forward voltage

(*)

VSD

-0.80

-1.2

IS= -1.7A,VGS=0V

Reverse recovery time

(‡)

trr

14.6

Reverse recovery charge

(‡)

Qrr

9.5

IS= -1.5A,di/dt=100A/μs

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

ZXMP3F30FH

30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET

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