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HV5812 bảng dữ liệu(PDF) 3 Page - Microchip Technology

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 2016 Microchip Technology Inc.
DS20005629A-page 3
HV5812
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage, VDD................................................................................................................................ –0.5V to +7.5V
Supply Voltage, VPP..................................................................................................................................–0.5V to +90V
Logic Input Levels ............................................................................................................................ –0.3V to VDD +0.3V
Maximum Operating Junction Temperature .........................................................................................................+125°C
Storage Temperature ............................................................................................................................–55°C to +150°C
Power Dissipation:
28-lead PDIP ......................................................................................................................................... 2000 mW
28-lead PLCC........................................................................................................................................ 1900 mW
28-Lead SOW........................................................................................................................................ 1700 mW
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Supply Voltage
VDD
4.5
—
5.5
V
Supply Voltage
VPP
20
—
80
V
Operating Junction Temperature
TJ
–40
—
+125
°C
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Over recommended operating conditions; TA = 25°C unless otherwise indicated.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Output Leakage Current
IDSS
—
–5
–15
µA
VOUT = 0V, TA = +70°C
High-level Output
VOH
HVOUT
78
78.5
—
V
IOUT = –25 mA, VPP = 80V,
TJ = +25°C
77
78
—
IOUT = –25 mA, VPP = 80V,
TJ = +125°C
DATA
OUT
4.5
4.7
—
V
IOUT = –200 µA, VDD = 5V
Low-level Output
VOL
HVOUT
—
1.5
3
V
IOUT = 1 mA, TJ = +25°C, VDD = 5V
—
2.3
4
IOUT = 1 mA, TJ = +125°C,
VDD = 5V
DATA
OUT
—
200
250
V
IOUT = +200 µA, VDD = 5V
Output Pull-down Current
ISINK
2
3.5
—
mA
VOUT = 5V to VPP, VDD = 5V
High-level Logic Input Voltage
VIH
3.5
—
5.3
V
VDD = 5V
Low-level Logic Input Voltage
VIL
–0.3
—
0.8
V
High-level Logic Input Current
IIH
—
0.05
0.5
µA
VIN = VDD, VDD = 5V
Low-level Logic Input Current
IIL
—
–0.05
–0.5
µA
VIN = 0.8V, VDD = 5V
Quiescent VDD Supply
Current
IDDQ
—
100
300
µA
All outputs high, VDD = 5V
—
100
300
All outputs low, VDD = 5V
Quiescent VPP Supply Current
IPPQ
—
10
100
µA
All outputs high, no load
—
10
100
All outputs low, no load



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