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DMN3033LSN bảng dữ liệu(PDF) 1 Page - ZP Semiconductor |
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DMN3033LSN bảng dữ liệu(HTML) 1 Page - ZP Semiconductor |
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1 / 2 page ![]() DMN3033LSN Features • Low Gate Charge • Low RDS(ON): • 30 m Ω @V GS = 10V • 40 m Ω @V GS = 4.5V • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Note 4) Mechanical Data • Case: SC-59 • Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.014 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Continuous TA = 25°C TA = 70°C ID 6 5 A Pulsed Drain Current (Note 2) IDM 24 A Body-Diode Continuous Current (Note 1) IS 2.25 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 1.4 W Thermal Resistance, Junction to Ambient (Note 1) t ≤10s RθJA 90 °C /W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. SC-59 Top View Equivalent Circuit Source Gate Drain D G S Pin Configuration N-CHANNEL ENHANCEMENT MODE MOSFET 1 of 2 sales@zpsemi.com www.zpsemi.com |
Số phần tương tự - DMN3033LSN |
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Mô tả tương tự - DMN3033LSN |
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