ADP7158ARDZ-2.0-R7 datasheet(20/23 Pages) AD

20 / 23 page

Data Sheet

ADP7158

Rev. A | Page 19 of 22

100

120

140

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

TOTAL POWER DISSIPATION (W)

6400mm2

500mm2

25mm2

TJ MAX

Figure 57. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 25°C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

TOTAL POWER DISSIPATION (W)

100

110

120

130

6400mm2

500mm2

25mm2

TJ MAX

Figure 58. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 50°C

0.10.20.30.40.50.60.7

0.9

0.8

1.0

TOTAL POWER DISSIPATION (W)

100

105

110

115

120

125

130

6400mm2

500mm2

25mm2

TJ MAX

Figure 59. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC, TA = 85°C

Thermal Characterization Parameter (ΨJB)

When the evaluation board temperature is known, use the

thermal characterization parameter, ΨJB, to estimate the junction

temperature rise (see Figure 60 and Figure 61). Calculate the

maximum junction temperature (TJ) from the evaluation board

temperature (TB) and power dissipation (PD) using the following

formula:

TJ = TB + (PD × ΨJB)

(5)

The typical value of ΨJB is 29.1°C/W for the 10-lead LFCSP

package and 30.1°C/W for the 8-lead SOIC package.

100

120

140

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

TOTAL POWER DISSIPATION (W)

TB =25°C

TB =50°C

TB =65°C

TB =85°C

TJ MAX

Figure 60. Junction Temperature vs. Total Power Dissipation for

the 10-Lead LFCSP

100

120

140

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

TOTAL POWER DISSIPATION (W)

TB =25°C

TB =50°C

TB =65°C

TB =85°C

TJ MAX

Figure 61. Junction Temperature vs. Total Power Dissipation for

the 8-Lead SOIC

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