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SST12LF09 bảng dữ liệu(PDF) 1 Page - Microchip Technology |
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SST12LF09 bảng dữ liệu(HTML) 1 Page - Microchip Technology |
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1 / 18 page ![]() 2013 Microchip Technology Inc. DS75083B-page 1 FEATURES • Input/output ports internally matched to 50 and DC decoupled • Package available - 16-contact X2QFN – 2.5mm x 2.5mmx 0.4mm • All non-Pb (lead-free) devices are RoHS compliant Transmitter Chain • Gain: - Typically 24 dB gain • Dynamic linear output power: - Meets 802.11g OFDM ACPR requirement up to 21 dBm using 3.6V VCC and 22.5 dBm using 5V VCC - 17 dBm using 3.6V, 18 dBm using 5.0V, at 3% EVM for 802.11g, 54 Mbps - 15 dBm using 3.6V, 16 dBm using 5.0V, at 1.75% dynamic EVM for 256 QAM, 40 MHz bandwidth • Operating current - 150 mA @ POUT = 17 dBm for 802.11g, 3.6V - 130 mA @ POUT = 15 dBm for MCS9, 3.6V • PA Control current, IPEN:<3 mA • Idle current, ICQ:90 mA (3.6V VCC) • Low shut-down current: ~2 μA • Power-up/down control - Turn on/off time (10%–90%) <400 ns • Limited variation over temperature - ~1 dB power variation between -40°C to +85°C • Linear on-chip power detection - Load and temperature insensitive - >20 dB dynamic range on-chip power detection Receiver Chain • Gain: Typically 12 dB gain • Noise figure: Typically 2.5 dB • Receiver input P1dB: Typically -6 dBm • LNA bypass loss: Typically 9 dB Bluetooth® Chain • Loss: 1.6dB • Output P1dB: >25 dBm APPLICATIONS • WLAN (IEEE 802.11b/g/n/256 QAM) • Home RF • Cordless phones • 2.4 GHz ISM wireless equipment 1.0 PRODUCT DESCRIPTION SST12LF09 is a 2.4 GHz Front-end Module (FEM) designed in compliance with IEEE 802.11b/g/n and 256 QAM applications. Based on GaAs pHEMT/HBT technology, it combines a high-performance transmitter power amplifier (PA), a low-noise receiver amplifier (LNA) and an antenna Tx/Rx/BT switch (SP3T SW). The input/output RF ports are single-ended and inter- nally matched to 50 . These RF ports are DC decou- pled, and require no DC-blocking capacitors or matching components. This helps reduce the system board Bill of Materials (BOM) cost. There are two components to the FEM: the Transmitter (TX) chain and the Receiver (RX) chain. The TX chain includes a high-efficiency PA based on the InGaP/GaAs HBT technology. The transmitter is optimized for high linearity, 802.11n and 256 QAM operation–typically providing 15 dBm with 1.75% dynamic EVM for 256 QAM, 40 MHz operation and 17 dBm at 3% for 802.11g, 54 Mbps operation at 3.6V. At 5V VCC, the transmitter provides typically 17 dBm with 1.75% dynamic EVM for 256 QAM, 40 MHz operation and 18 dBm at 3% for 802.11g, 54 Mbps operation. SST12LF09 has a transmitter on-chip, single-ended power detector that is stable over temperature and insensitive to output VSWR. It features a wide dynamic-range (20 dB) with dB-wise linear operation. The on-chip power detector provides a reliable solution to board-level power control. The Rx chain provides typically 12 dB gain with 2.5 dB noise figure. With the LNA bypassed, the receiver loss is typically 9 dB. SST12LF09 is offered in a 16-contact X2QFN package. See Figure 3-1 for pin assignments and Table 4-1 for pin descriptions. SST12LF09 2.4 GHz High-Linearity, WLAN Front-End Module |
Số phần tương tự - SST12LF09_13 |
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Mô tả tương tự - SST12LF09_13 |
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