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LM358FVT bảng dữ liệu(PDF) 30 Page - Rohm

tên linh kiện LM358FVT
Giải thích chi tiết về linh kiện  Ground Sense Operational Amplifiers
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nhà sản xuất  ROHM [Rohm]
Trang chủ  http://www.rohm.com
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LM358FVT bảng dữ liệu(HTML) 30 Page - Rohm

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Datasheet
www.rohm.com
TSZ02201-0GMG0G200190-1-2
©2015 ROHM Co., Ltd. All rights reserved.
30/44
01.Aug.2016 Rev.005
TSZ22111･15･001
LM358xxx
LM324xxx
LM2904xxx
LM2902xxx
Operational Notes – continued
11.
Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 68. Example of monolithic IC structure



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