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TUSB321 bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TUSB321 bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 24 page ![]() 4 TUSB321 SLLSEO6B – JUNE 2015 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: TUSB321 Submit Documentation Feedback Copyright © 2015–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage VDD –0.3 6 V Control pins PORT, CURRENT_MODE, ID, DIR, VCONN_FAULT –0.3 VDD + 0.3 V CC1, CC2 –0.3 6 OUT1, OUT2 –0.3 VDD + 0.3 VBUS_DET –0.3 4 Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±7000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±1500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VDD Supply voltage range 4.5 5.5 V VBUS System VBUS voltage 4 5 28 V VBUS_DET VBUS_DET threshold voltage on the pin 4 V VCONN Supply for active cable (With VDD at 5 V) 4.75 5.5 V TA Operating free air temperature range 0 25 70 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and C Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) UNIT RWB (X2QFN) 12 PINS RθJA Junction-to-ambient thermal resistance 169.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 68.1 °C/W RθJB Junction-to-board thermal resistance 83.4 °C/W ψJT Junction-to-top characterization parameter 2.2 °C/W ψJB Junction-to-board characterization parameter 83.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A — |
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