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NCV8853 bảng dữ liệu(PDF) 5 Page - ON Semiconductor

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NCV8853 bảng dữ liệu(HTML) 5 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (VIN = 3.4 V to 36 V, EN = 5 V. Min/Max values are valid for the temperature range
−40
°C ≤ TJ ≤ 150°C unless noted otherwise, and are guaranteed by test, design or statistical correlation.)
Characteristic
Unit
Max
Typ
Min
Conditions
Symbol
CURRENT SENSE AMP
Input Bias Current
Isns,bias
NCV885300
NCV885301
30
70
50
120
mA
CURRENT LIMIT / OVER CURRENT PROTECTION
Cycle−by−Cycle Current
Limit Threshold
Vcl
85
100
115
mV
Cycle−by−Cycle Current
Limit Response Time
tcl
200
nsec
Over Current Protection
Threshold
Vocp
% of Vcl
125
150
175
%
Over Current Protection
Response Time
tocp
200
ns
GATE DRIVERS
Leading Edge Blanking
Time
ton,min
100
ns
Gate Driver Pull Up Current
Isink
VIN − VGDRV = 4 V
160
230
300
mA
Gate Driver Pull Down
Current
Isrc
VIN − VGDRV = 4 V
160
230
300
mA
Gate Driver Clamp Voltage
(VIN – VGDRV)
Vdrv
6.0
8.0
10
V
Power Switch Gate to
Source Voltage
Vgs
VIN = 4 V
3.8
V
SHORT CIRCUIT PROTECTION
Startup Blanking Time
tscp,dly
From start of soft−start, % of soft−start time
105
300
%
Short−Circuit Threshold
Voltage
Vscp
% of Feedback Voltage (Vref)
65
70
75
%
Hiccup Time
thcp,dly
% of Soft−Start Time
135
%
SC Response Time
tscp
Switcher Running
60
200
ns
THERMAL SHUTDOWN
Thermal Shutdown
Threshold
Tsd
TJ rising
160
170
180
°C
Thermal Shutdown
Hysteresis
Tsd,hys
TJ Shutdown – TJ Startup
10
15
20
°C
Thermal Shutdown Delay
ttsd
TJ > Thermal Shutdown Threshold to stop
switching
200
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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