MBRF2035C datasheet(1/2 Pages) MOSPEC

tên linh kiện	MBRF2035C

Giải thích chi tiết về linh kiện	Full Plastic Dual Schottky Barrier Power Rectifiers

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nhà sản xuất	MOSPEC [Mospec Semiconductor]

Trang chủ	http://www.mospec.com.tw

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MOSPEC

MBRF2030C Thru MBRF2060C

Switchmode

Full Plastic Dual Schottky Barrier Power Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

Features

＊

Low Forward Voltage.

＊

Low Switching noise.

＊

High Current Capacity

＊

Guarantee Reverse Avalanche.

＊

Guard-Ring for Stress Protection.

＊

Low Power Loss & High efficiency.

＊

175℃ Operating Junction Temperature

＊

Low Stored Charge Majority Carrier Conduction.

＊

Plastic Material used Carries Underwriters Laboratory

Flammability Classification 94V-O

SCHOTTKY BARRIER

RECTIFIERS

20 AMPERES

MAXIMUM RATINGS

MBRF20

Characteristic

Symbol

30C

35C

40C

45C

50C

60C

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

25

28

32

35

42

V

Average Rectifier Forward Current (per diode)

Total Device (Rated VR), TC=100℃

IF(AV)

10

20

A

Peak Repetitive Forward Current

(Rate VR, Square Wave, 20kHz)

IFM

20

A

Non-Repetitive Peak Surge Current

(Surge applied at rate load conditions

halfware, single phase, 60Hz)

IFSM

150

A

Operating and Storage Junction

Temperature Range

TJ , Tstg

-65 to +175

℃

30-60 VOLTS

ITO-220AB

MILLIMETERS

DIM

MIN

MAX

A

14.90

15.15

B

13.35

13.55

C

10.00

10.10

D

6.55

6.65

E

2.65

2.75

F

1.55

1.65

G

1.15

1.25

H

0.55

0.65

I

2.50

2.60

J

3.00

3.20

K

1.10

1.20

L

0.55

0.65

M

4.40

4.60

N

1.15

1.25

O

3.35

3.45

P

2.65

2.75

Q

3.15

3.25

R

3.60

3.80

THERMAL RESISTANCES

Typical Thermal Resistance junction to

case (per diode)

Rθ j-c

3.2

℃

/w

ELECTRIAL CHARACTERISTICS

MBRF20

Characteristic

Symbol

30C

35C

40C

45C

50C

60C

Unit

Maximum Instantaneous Forward Voltage

( IF =10 Amp TC = 25℃) (per diode)

( IF =10 Amp TC = 125℃)

VF

0.75

0.66

0.80

0.72

V

Maximum Instantaneous Reverse Current

( Rated DC Voltage, TC = 25℃)

( Rated DC Voltage, TC = 125℃)

IR

0.01

20

mA

Số phần tương tự - MBRF2035C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
General Semiconductor	MBRF2035CT	124Kb / 2P	SCHOTTKY ISOLATED PLASTIC RECTIFIER
GOOD-ARK Electronics	MBRF2035CT	257Kb / 3P	Dual Schottky Barrier Rectifiers
Taiwan Semiconductor Co...	MBRF2035CT	210Kb / 2P	Isolated 20.0 AMPS. Schottky Barrier Rectifiers
Taiwan Semiconductor Co...	MBRF2035CT	122Kb / 2P	Isolation 20.0 AMPS. Schottky Barrier Rectifiers
Vishay Siliconix	MBRF2035CT	512Kb / 5P	Dual Common-Cathode Schottky Rectifier 08-Nov-07

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Mô tả tương tự - MBRF2035C

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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