DMN3055LFDB datasheet(2/7 Pages) DIODES

2 / 7 page

DMN3055LFDB

Document number: DS38172 Rev. 1- 2

2 of 7

www.diodes.com

April 2016

DMN3055LFDB

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

5.0

4.0

Maximum Continuous Body Diode Forward Current (Note 6)

1.5

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

IDM

Avalanche Current (Note 7) L = 0.1mH

IAS

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

0.81

TA = +70°C

0.52

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

132

°C/W

t<10s

101

Total Power Dissipation (Note 6)

TA = +25°C

1.36

TA = +70°C

0.87

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

–

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current, TJ = +25°C

IDSS

–

1.0

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

–

±100

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.5

–

1.5

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

–

Ω

VGS = 4.5V, ID = 3A

–

VGS = 2.5V, ID = 2A

–

105

150

VGS = 2.0V, ID = 1A

Diode Forward Voltage

VSD

–

0.8

1.2

VGS = 0V, IS = 2A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

–

458

–

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

–

Reverse Transfer Capacitance

Crss

–

Gate Resistance

–

2.1

–

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 10V)

–

11.2

–

VDS = 15V, ID = 4A

Total Gate Charge (VGS = 4.5V)

–

5.3

–

Gate-Source Charge

Qgs

–

1.1

–

Gate-Drain Charge

Qgd

–

1.8

–

Turn-On Delay Time

tD(ON)

–

1.8

–

VDS = 15V, VGS = 10V,

Rg = 6

Ω, RL = 3.75Ω,

Turn-On Rise Time

–

2.6

–

Turn-Off Delay Time

tD(OFF)

–

9.5

–

Turn-Off Fall Time

–

2.1

–

Reverse Recovery Time

tRR

–

7.0

–

IF = 3A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

–

1.8

–

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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