MMDT2907A datasheet(1/2 Pages) HOTTECH

tên linh kiện	MMDT2907A

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complementary PNP Type available MMDT29

MARKING: K2F

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60

V

Collector-Emitter Voltage

V

CEO

-60

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-600

Collector Power Dissipation

I

C

200

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -10

μA, IE=0

-60

V

Collector-emitter breakdown voltage

VCEO

IC= -10mA, IB=0

-60

V

Emitter-base breakdown voltage

VEBO

IE=-10

μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V, IE=0

-10

nA

Collector cut-off current

ICEX

VCE=-30V,VEB(Off)=-0.5V

-50

nA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-10

nA

DC current gain

hFE(1)

VCE=-10V, IC= -0.1mA

75

hFE(2)

VCE=-10V, IC= -1mA

100

hFE(3)

VCE=-10V, IC=-10mA

100

hFE(4)

VCE=-10V, IC= -150mA

100

300

hFE(5)

VCE=-10V, IC=-500mA

50

Collector-emitter saturation voltage

VCE(sat)1

IC=-150mA, IB=-15mA

-0.4

V

VCE(sat)2

IC=-500mA, IB=- 50mA

-1.6

V

Base-emitter saturation voltage

VBE(sat)1

IC=-150mA, IB=-15mA

-1.3

V

VBE(sat)2

IC=-500mA, IB= -50mA

-2.6

V

Transition frequency

fT

VCE=-20V, IC= -50mA,

f=100MHz

200

MHz

Output Capacitance

Cob

VCB=-10V, IE= 0,

f=1MHz

8

pF

Input Capacitance

Cib

VEB=-2V, IC= 0,

f=1MHz

30

pF

Delay time

td

VCC=-30V,IC=-150mA, IB1=-15mA

10

nS

Rise time

tr

40

nS

Storage time

tS

VCC=-6V, IC=-150mA,

IB1= IB2= -15mA

225

nS

Fall time

tf

60

nS

MMDT2907A(PNP)

222A

E

2

B

2

C

1

C

2

B

1

E

1

SOT-363

mW

mA

Số phần tương tự - MMDT2907A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Diodes Incorporated	MMDT2907A	53Kb / 4P	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30122 Rev. B-2
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	MMDT2907A	128Kb / 4P	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30109 Rev. 10 - 2
Galaxy Semi-Conductor H...	MMDT2907A	165Kb / 3P	Dual NPN Small Signal Surface Mount Transistor Rev.A
Diodes Incorporated	MMDT2907A	201Kb / 4P	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30109 Rev. 13 - 2

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Mô tả tương tự - MMDT2907A

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