NTD2955 datasheet(4/8 Pages) ONSEMI

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NTD2955

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0.1

100

0.1

100

Figure 7. Capacitance Variation

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

RG, GATE RESISTANCE (W)

100

VDD = −30 V

ID = −12 A

VGS = −10 V

TJ = 25°C

td(off)

QT, TOTAL GATE CHARGE (nC)

246

ID = 12 A

TJ = 25°C

VGS

1000

100

2.5

VDS

QGS

QGD

td(on)

12.5

7.5

0.25

0.75

1.75

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

0.5

1.25

1.5

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

−VGS

−VDS

TJ = 25°C

VDS = 0 V

VGS = 0 V

1000

800

600

400

200

Ciss

Coss

Crss

Ciss

Crss

1200

Figure 10. Diode Forward Voltage versus Current

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = −15 V

SINGLE PULSE

TC = 25°C

100 ms

1 ms

10 ms

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

Figure 12. Diode Reverse Recovery Waveform

di/dt

trr

0.25 IS

TIME

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